n-channel enhancement mode field symbol units v ds v v gs v t a =25c t a =70c i dm v ka v t a =25c t a =70c i fm t a =25c t a =70c t j , t stg c symbol units r jl r jl absolute maximum ratings t a =25c unless otherwise noted parameter mosfet schottky drain-source voltage 20 gate-source voltage 8 continuous drain current a i d 3.8 a 3 pulsed drain current b 10 schottky reverse voltage 20 continuous forward current a i f 2 a 1 pulsed forward current b 10 w 0.7 0.59 junction and storage temperature range -55 to 150 -55 to 150 power dissipation p d 1.15 0.92 parameter: thermal characteristics mosfet typ max maximum junction-to-ambient a t 10s r ja 80.3 110 c/w maximum junction-to-ambient a steady-state 117 150 maximum junction-to-lead c steady-state 43 80 thermal characteristics schottky maximum junction-to-ambient a t 10s r ja 109.4 135 c/w maximum junction-to-ambient a steady-state 136.5 175 maximum junction-to-lead c steady-state 58.5 80 AO6702 features v ds (v) = 20v i d = 3.8a (v gs = 4.5v) r ds(on) < 50m ? (v gs = 4.5v) r ds(on) < 65m ? (v gs = 2.5v) r ds(on) < 95m ? (v gs = 1.8v) schottky v ds (v) = 20v, i f = 1a, v f <0.5v@0.5a the AO6702 uses advanced trench technology to provide excellent r and low gate charge. a schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for dc-dc conversion applications. standard product AO6702 is pb-free (meets rohs & sony 259 specifications). AO6702l is a green product ordering option. AO6702 and AO6702l are electrically identical. tsop6 a k g d s g s a d n/c k 1 2 3 6 5 4 general description effect transistor with schcttky diode ds(on) www.freescale.net.cn 1 / 5
AO6702 symbol min typ max units bv dss 20 v 1 t j =55c 5 i gss 100 na v gs(th) 0.4 0.6 1 v i d(on) 10 a 41.6 50 t j =125c 63 80 54 65 m ? 74 95 m ? g fs 10.5 s v sd 0.8 1 v i s 1.8 a c iss 449 pf c oss 74 pf c rss 51.6 pf r g 4.9 ? q g 5.9 nc q gs 0.36 nc q gd 1.3 nc t d(on) 4.5 ns t r 6ns t d(off) 32.7 ns t f 7.1 ns t rr 13 ns q rr 3.3 nc schottky parameters v f 0.39 0.5 v 0.02 20 c t 34 pf t rr 5.2 10 ns q rr 0.8 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. schottkyreverse recovery time i f =1a, di/dt=100a/ s schottky reverse recovery charge i f =1a, di/dt=100a/ s i f =3.8a, di/dt=100a/ s i f =3.8a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =16v, v gs =0v a gate-body leakage current v ds =0v, v gs =8v r ds(on) static drain-source on-resistance gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v v gs =4.5v, i d =3.8a m ? v gs =2.5v, i d =3.3a v gs =1.8v, i d =2.8a forward transconductance v ds =5v, i d =3.8a input capacitance v gs =5v, v ds =10v, r l =2.6 ? , r gen =0 ? gate drain charge output capacitance turn-on rise time turn-off delaytime reverse transfer capacitance diode forward voltage body diode reverse recovery time body diode reverse recovery charge turn-off fall time total gate charge gate source charge turn-on delaytime forward voltage drop i f =0.5a i rm maximum reverse leakage current v r =16v ma v r =16v, t j =125c junction capacitance v r =10v i s =1a,v gs =0v maximum body-diode continuous current dynamic parameters v gs =4.5v, v ds =10v, i d =3.8a v gs =0v, v ds =10v, f=1mhz gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the valu e in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev3: august 2005 www.freescale.net.cn 2 / 5
AO6702 typical electrical and thermal characteristic s 0 4 8 12 16 012345 v ds (volts) figure 1: on-regions characteristi cs i d (a) v gs =1.5v v gs =2.0v 8v 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v gs =5v 30 40 50 60 70 80 90 0246810 i d( a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =4.5v v gs =2.5v v gs =1.8v 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalize on-resistance v gs =4.5v v gs =2.5v v gs =1.8v i d =3.8a 30 40 50 60 70 80 90 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c v gs =1.0v www.freescale.net.cn 3 / 5
AO6702 typical electrical and thermal characteristic s 0 1 2 3 4 5 6 01234567 qg (nc) figure 7: gate-charge characteristics v gs (volt s) v ds =4.5v i d =3.8a 0 100 200 300 400 500 600 700 800 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf ) c iss c rss c oss 0.1 1 10 100 0.1 1 10 100 v ds (volts) figure 9: maximum forward biased safe operating area (note e) i d (a) t j(max) =150c t a =25c r ds(on) limited 0 2 4 6 8 10 12 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedence z ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =110c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse 10 s 10 0 s 1ms 10ms 0.1 s 1 s dc 10s t on t p d www.freescale.net.cn 4 / 5
AO6702 typical electrical and thermal characteristics: schottky 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v f (volts) figure 12: schottky forward characteristics i f (amps) 0 20 40 60 80 100 0 5 10 15 20 v ka (volts) figure 13: schottky capacitance characteristics capacitance (pf) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 0 25 50 75 100 125 150 temperature (c) figure 15: schottky leakage current vs. junction temperature leakage current (a) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: schottky normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0.1 0.2 0.3 0.4 0.5 0 25 50 75 100 125 150 temperature (c) v f (volts) figure 14: schottky forward drop vs. junction temperature single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =135c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse f = 1mhz i f =0.5a 25c v r =16v 125c t on t p d www.freescale.net.cn 5 / 5
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